Thomas M. Graettinger
78Patents
17h-index
43Co-inventors
84Inventor score
Filing activity: Apr 8, 1996 → May 12, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7125781B2 | Methods of forming capacitor devices | Electricity | 113 | Expired |
| US6348709B1 | Electrical contact for high dielectric constant capacitors and method for fabricating the same | Electricity | 99 | Expired |
| US5844771A | Capacitor construction | Electricity | 66 | Expired |
| US6753618B2 | MIM capacitor with metal nitride electrode materials and method of formation | Electricity | 65 | Expired |
| US5843830A | Capacitor, and methods for forming a capacitor | Electricity | 55 | Expired |
| US5930639A | Method for precision etching of platinum electrodes | Electricity | 52 | Expired |
| US7226845B2 | Semiconductor constructions, and methods of forming capacitor devices | Emerging Cross-Sectional Technologies | 42 | Expired |
| US8228743B2 | Memory cells containing charge-trapping zones | Emerging Cross-Sectional Technologies | 42 | Active |
| US7449391B2 | Methods of forming plurality of capacitor devices | Electricity | 40 | Active |
| US6682969B1 | Top electrode in a strongly oxidizing environment | Electricity | 38 | Expired |
| US7230292B2 | Stud electrode and process for making same | Electricity | 35 | Expired |
| US6171925A | Capacitor, and methods for forming a capacitor | Electricity | 32 | Expired |
| US7271051B2 | Methods of forming a plurality of capacitor devices | Electricity | 29 | Expired |
| US7420238B2 | Semiconductor constructions | Electricity | 29 | Expired |
| US6049101A | Processing methods of forming a capacitor, and capacitor construction | Electricity | 24 | Expired |
| US6881642B2 | Method of forming a MIM capacitor with metal nitride electrode | Electricity | 20 | Expired |
| US7898850B2 | Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells | Emerging Cross-Sectional Technologies | 18 | Active |
| US6083803A | Semiconductor processing methods of forming a conductive projection and methods of increasing alignment tolerances | Electricity | 16 | Expired |
| US6919257B2 | Method of forming a capacitor | Electricity | 16 | Expired |
| US6482736B1 | Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers | Electricity | 15 | Expired |
| US6146961A | Processing methods of forming a capacitor | Electricity | 13 | Expired |
| US7033884B2 | Methods of forming capacitor constructions | Electricity | 13 | Expired |
| US6806187B2 | Electrical contact for high dielectric constant capacitors and method for fabricating the same | Electricity | 13 | Expired |
| US5933743A | Method of improving alignment signal strength by reducing refraction index at interface of materials in semiconductors | Electricity | 11 | Expired |
| US7105403B2 | Double sided container capacitor for a semiconductor device and method for forming same | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.