Evaluation circuit for a DRAM
US6754110B2 · kind B2 · utility
2Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2002 |
| Grant date | Jun 22, 2004 |
| Priority date | — |
| Expiry date | Jul 23, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4097
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit configuration for evaluating electrical charges of memory cells in a DRAM is provided. Signal lines within the evaluation circuit cross one another in order to reduce parasitic coupling capacitances between adjacent signal lines of a memory cell array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.