Patent · US Expired

Evaluation circuit for a DRAM

US6754110B2 · kind B2 · utility

2Cited by
3References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 8, 2002
Grant dateJun 22, 2004
Priority date
Expiry dateJul 23, 2022

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/4097
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A circuit configuration for evaluating electrical charges of memory cells in a DRAM is provided. Signal lines within the evaluation circuit cross one another in order to reduce parasitic coupling capacitances between adjacent signal lines of a memory cell array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.