Low-resistance high-magnetoresistance magnetic tunnel junction device with improved tunnel barrier
US6756128B2 · kind B2 · utility
22Cited by
9References
18Claims
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Key dates
| Filing date | Nov 7, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Nov 7, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1114
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A low resistance magnetic tunnel junction device, such as a memory cell in a nonvolatile magnetic random access memory (MRAM) array or a magnetoresistive read head in a magnetic recording disk drive, has a titanium oxynitride (TiOxNy) layer as the single-layer tunnel barrier or as one of the layers in a bilayer tunnel barrier. In a bilayer barrier the other barrier layer is an oxide or nitride of Al, Si, Mg, Ta, [[Si]] and Y, such as Al2O3, AlN, Si3N4, MgO, Ta2O5, TiO2, or Y2O3. The Ti barrier material can be alloyed with other known metals, such as Al and Mg, to produce barriers with TiAlOxNy and TiMgOxNy compositions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.