Positive photoresist composition and method of patterning resist thin film for use in inclined implantation process
US6756178B2 · kind B2 · utility
2Cited by
3References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 15, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Nov 15, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0236
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A composition includes (A) a novolak resin containing at least 20% by mole of a m-cresol repeating unit and having a 1-ethoxyethyl group substituting for part of hydrogen atoms of phenolic hydroxyl groups, (B) a quinonediazide ester of, for example, the following formula, and (C) 1,1-bis(4-hydroxyphenyl)cyclohexane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.