Method for fabricating capacitors in semiconductor devices
US6756261B2 · kind B2 · utility
4Cited by
6References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Dec 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a capacitor of a semiconductor device is disclosed, which can control the composition of a dielectric layer easily and improve the property of leakage current while not dropping the throughput because it does not need to require to lower the process temperature and pressure. The method includes: a) forming a bottom electrode; b) forming an STO seed layer as a first dielectric layer on the bottom electrode; c) forming a BST layer as a second dielectric layer on the STO seed layer; and d) forming a top electrode on the BST layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.