Semiconductor integrated circuit device having spaced-apart electrodes and the method thereof
US6756262B1 · kind B1 · utility
24Cited by
10References
13Claims
0Family size
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Key dates
| Filing date | Nov 9, 2000 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Nov 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
Conduction reliability between a capacitor upper electrode and a plug connected to an upper layer wire is kept high to prevent connection defects and to reduce the resistance of the capacitor upper electrode. In a capacitor of a DRAM comprising a lower electrode 45 made of ruthenium, a capacitor insulating film 50 made of BST and an upper electrode 49, the upper electrode 49 has a laminate structure comprising a ruthenium film 47 formed on the side of the capacitor insulating film 50 and a tungsten film 48 formed over the former.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.