Low temperature metallization process
US6756302B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2000 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Oct 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a method of forming a layer of metal on a substrate and fill the via with high throughput. A layer of metal can be formed on a substrate using sequentially a cold deposition step, a slow hot deposition step and a rapid hot deposition step. The cold deposition step need only be performed for a time sufficient to deposit a seed layer of metal over the entire surface on which the metal layer is to be formed. In the slow hot deposition step, further metal is deposited at a power allowing for surface diffusion of the deposited metal, which is then followed by a rapid hot deposition of metal under bulk diffusion conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.