Method of forming contact openings
US6756315B1 · kind B1 · utility
3Cited by
19References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2000 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Sep 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of forming, in semiconductor substrates, contact openings having low contact resistance. The method involves, in particular, the introduction of a “soft etch” cleaning step that is used to clean the bottom of the contact openings. The “soft etch” cleaning step uses fluorocarbon chemistry. It is shown that the resulting resistance of the contact openings is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.