Inventor · San Jose, CA, US

Prashant B. Phatak

90Patents
11h-index
42Co-inventors
74Inventor score

Filing activity: Sep 29, 2000 → May 26, 2015

Most-cited inventions

PatentTitleAreaCited byStatus
US8183553B2 Resistive switching memory element including doped silicon electrode Electricity 127 Active
US7629198B2 Methods for forming nonvolatile memory elements with resistive-switching metal oxides Electricity 98 Active
US8294219B2 Nonvolatile memory element including resistive switching metal oxide layers Electricity 31 Active
US8072795B1 Biploar resistive-switching memory with a single diode per memory cell Physics 23 Active
US7960216B2 Confinement techniques for non-volatile resistive-switching memories Electricity 19 Active
US8766234B1 Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks Electricity 17 Active
US7824935B2 Methods of combinatorial processing for screening multiple samples on a semiconductor substrate Electricity 15 Active
US8420478B2 Controlled localized defect paths for resistive memories Electricity 15 Active
US8062918B2 Surface treatment to improve resistive-switching characteristics Electricity 14 Active
US8129704B2 Non-volatile resistive-switching memories Electricity 14 Active
US8053364B2 Closed-loop sputtering controlled to enhance electrical characteristics in deposited layer Electricity 12 Active
US8981327B1 Carbon-doped silicon based selector element Electricity 11 Active
US8008096B2 ALD processing techniques for forming non-volatile resistive-switching memories Electricity 11 Active
US8551809B2 Reduction of forming voltage in semiconductor devices Electricity 9 Active
US8097878B2 Nonvolatile memory elements with metal-deficient resistive-switching metal oxides Electricity 9 Active
US8465996B2 Surface treatment to improve resistive-switching characteristics Electricity 7 Active
US8049305B1 Stress-engineered resistance-change memory device Electricity 7 Active
US8872151B2 Surface treatment to improve resistive-switching characteristics Electricity 6 Active
US8975610B1 Silicon based selector element Electricity 6 Active
US7977152B2 Non-volatile resistive-switching memories formed using anodization Electricity 6 Active
US8298891B1 Resistive-switching memory element Electricity 5 Active
US9362497B2 Reduction of forming voltage in semiconductor devices Electricity 5 Active
US7968452B2 Titanium-based high-K dielectric films Emerging Cross-Sectional Technologies 5 Active
US8318534B2 Non-volatile resistive-switching memories formed using anodization Electricity 5 Active
US8654560B2 Variable resistance memory with a select device Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.