Structure for nitride based laser diode with growth substrate removed
US6757314B2 · kind B2 · utility
80Cited by
9References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1999 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Mar 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A structure for nitride laser diode arrays attached to a thermally conducting substrate is described where the sapphire growth substrate has been removed. The thermally conducting substrate is attached to the side opposite of the sapphire growth substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.