Plasma RIE polymer removal
US6758223B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2000 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Jun 23, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removal of post reactive ion etch by-product from a semiconductor wafer surface or microelectronic composite structure comprising:supplying a reducing gas plasma incorporating a forming gas mixture selected from the group consisting of a mixture of N2/H2 or a mixture of NH3/H2 into a vacuum chamber in which a semiconductor wafer surface or a microelectronic composite structure is supported to form a post-RIE polymer material by-product on the composite structure without significant removal of an organic, low K material which has also been exposed to the reducing gas plasma; andremoving the post-RIE polymer material by-product with a wet clean.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.