Method of patterning a layer of magnetic material
US6759263B2 · kind B2 · utility
65Cited by
12References
24Claims
0Family size
Inventors
Key dates
| Filing date | Aug 29, 2002 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Oct 12, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a layer of magnetic material to form isolated magnetic regions. The method forms a mask on a film stack comprising a layer of magnetic material such the protected and unprotected regions are defined. The unprotected regions are oxidized to form isolated magnetic regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.