Method for filling depressions in a surface of a semiconductor structure, and a semiconductor structure filled in this way
US6759323B2 · kind B2 · utility
2Cited by
8References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 26, 2001 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Feb 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for filling depressions in a surface of a semiconductor structure, and a semiconductor structure filled in this way. On a semiconductor structure, in depressions on the surface, in particular below the first metal structure plane, a diffusion barrier layer is deposited, preferably with the aid of plasma-enhanced vapor phase deposition, during which the ions contained in the plasma are accelerated perpendicularly to the surface, resulting in non-conformal deposition of the diffusion barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.