Bipolar junction transistor and fabricating method
US6759731B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 5, 2002 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Jun 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
Abstract
A bipolar junction transistor (BJT) includes a dielectric layer formed on a predetermined region of a substrate, an opening formed in the dielectric layer and a portion of the substrate being exposed, a heavily doped polysilicon layer formed on a sidewall of the opening to define a self-aligned base region in the opening, an intrinsic base doped region formed within the substrate and in a bottom of the opening by implanting through the self-aligned base region, a spacer formed on the heavily doped polysilicon layer to define a self-aligned emitter region in the opening, and an emitter conductivity layer being filled with the self-aligned emitter region and a PN junction being formed between the emitter conductivity layer and the intrinsic base doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.