Programming a flash memory cell
US6760257B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2002 |
| Grant date | Jul 6, 2004 |
| Priority date | — |
| Expiry date | Oct 1, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Programming a flash memory cell comprises receiving a first Vt corresponding to a first bit stored in the flash memory cell and receiving a second Vt corresponding to a second bit stored in the flash memory cell. In additon, programming the flash memory cell comprises programming one of the first bit and the second bit of the flash memory cell with a first programming voltage if the first Vt and the second Vt both correspond to a low Vt state prior to programming the flash memory cell. Furthermore, the first programming voltage is &Dgr;V lower than a second programming voltage that is used to program one of the first bit and the second bit of the flash memory cell if either of the first Vt and the second Vt correspond to a high Vt state prior to programming the flash memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.