Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
US6761796B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2001 |
| Grant date | Jul 13, 2004 |
| Priority date | — |
| Expiry date | Dec 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.