Positive photoresist composition and method of patterning resist thin film for use in inclined implantation process
US6762005B2 · kind B2 · utility
2Cited by
2References
6Claims
0Family size
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Key dates
| Filing date | Nov 15, 2002 |
| Grant date | Jul 13, 2004 |
| Priority date | — |
| Expiry date | Nov 15, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0236
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A composition includes (A) an alkali-soluble resin having Mw of 1500 to 10000, (B) a quinonediazide ester of, for example, the following formula, and (C) a phenolic compound containing an acid-decomposable group. When a resin film 1 &mgr;m thick is prepared from the alkali-soluble resin (A), the resin film is completely dissolved in 2.38% by weight tetramethylammonium hydroxide aqueous solution at 23° C. within ten seconds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.