Process for fabrication of a ferrocapacitor
US6762064B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 17, 2003 |
| Grant date | Jul 13, 2004 |
| Priority date | — |
| Expiry date | Apr 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the fabrication of a ferrocapacitor comprising depositing a first mask element 7 over a structure having a bottom electrode 1, a ferroelectric layer 3 and a top electrode 5. RIE etching is performed to remove portions of the top electrode 5 and the ferroelectric layer 3. Then a second hard mask element 9 is deposited over the first hardmask element. The second hard mask element is rounded by an etch back process, and its taper angle is controlled to be in the range 75-87°. A second RIE etching process is performed to remove portions of the bottom electrode 1. Due to the rounding of the second hard mask elements 9 low residues are formed on the sides of the etched bottom electrode 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.