Method of forming refractory metal contact in an opening, and resulting structure

US6762121B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jonathan D. Chapple-Sokol · Poughkeepsie, US
• Randy W. Mann · Jericho, US
• William J. Murphy · North Ferrisburgh, US
• Jed H. Rankin · South Burlington, US
• Daniel S. Vanslette · South Burlington, US

Key dates

• Filing date: Apr 4, 2001
• Grant date: Jul 13, 2004
• Expiry date: Jul 11, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/12
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of ensuring against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 å, serves a sacrificial purpose and prevents interaction between any fluorine that is released during the refractory material deposition step from interacting with the underlying silicide.