Method for in-situ film thickness measurement and its use for in-situ control of deposited film thickness
US6762849B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 19, 2002 |
| Grant date | Jul 13, 2004 |
| Priority date | — |
| Expiry date | Oct 18, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/0625
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and system for real-time, in-situ measurement of a film being deposited onto a surface of a wafer in a tool during semiconductor, optical component and electro-optic component processing and manufacturing. The method and system include real-time, in-situ detecting and analyzing radiation within the tool which is reflected off a wafer surface and subsequently diffusely reflected off internal roughened surfaces of the processing chamber. The emitted radiation may be derived from the plasma within the chamber, or alternatively, an external energy source. In detecting and analyzing the radiation reflected off the internal surfaces of the processing tool, the instant method and system monitors the deposition process of the film and automatically controls the deposition of such film in response to the measurements taken.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.