Method and system for mask pattern correction
US6764795B2 · kind B2 · utility
25Cited by
1References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2002 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Jan 21, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and system for mask pattern correction are disclosed. A portion of a mask pattern is segmented into segments (22) that include a base segment (22a) and a relational segment (22b). The relational segment (22b) is matched with the base segment (22a). A proximity correction is determined for the base segment (22a), and a critical dimension correction is determined for the relational segment (22b). The critical dimension correction is determined with respect to the proximity correction of the matching base segment (22a).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.