Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET device

US6764884B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Bin Yu · Cupertino, US
• Haihong Wang · Fremont, US

Key dates

• Filing date: Apr 3, 2003
• Grant date: Jul 20, 2004
• Expiry date: Apr 3, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A method of manufacturing a FinFET device includes forming a fin structure on an insulating layer. The fin structure includes a conductive fin. The method also includes forming source/drain regions and forming a dummy gate over the fin. The dummy gate may be removed and the width of the fin in the channel region may be reduced. The method further includes depositing a gate material to replace the removed dummy gate.