Method of depositing dielectric films
US6764958B1 · kind B1 · utility
281Cited by
36References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2000 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Jan 2, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.