Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
US6765250B2 · kind B2 · utility
4Cited by
6References
52Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2003 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Apr 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.