Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory
US6765824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2003 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Mar 19, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There is provided a magnetoresistance element in which a shape of a free ferromagnetic layer includes a first portion with a parallelogrammic contour, and second portions that protrude from a pair of opposite corners of the first portion respectively in a main direction parallel to a pair of opposite sides of the first portion, the shape is asymmetric with respect to a line that passes through a center of the first portion and is parallel to the main direction, and an axis of easy magnetization of the free ferromagnetic layer falls within a range defined by an acute angle that a first direction makes with a second direction, the first direction being substantially parallel to the main direction and the second direction being substantially parallel to the longest line segment that joins contours of the second portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.