Low dose super deep source/drain implant
US6767778B2 · kind B2 · utility
8Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2002 |
| Grant date | Jul 27, 2004 |
| Priority date | — |
| Expiry date | Aug 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.