Patent · US Expired

Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask

US6767824B2 · kind B2 · utility

19Cited by

13References

22Claims

0Family size

Inventors

Padmapani Nallan · San Jose, US
Ajay Kumar · Fairport, US
Guangxiang Jin · San Jose, US
Wei Liu · Espoo, FI

Key dates

Filing date	Jan 6, 2003
Grant date	Jul 27, 2004
Priority date	—
Expiry date	Jan 6, 2023

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/945
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of fabricating a gate structure of a field effect transistor comprising processes of forming an &agr;-carbon mask and plasma etching a gate electrode and a gate dielectric using the &agr;-carbon mask. In one embodiment, the gate dielectric comprises hafnium dioxide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.