Patent · US Expired

Magnetic memory

US6768150B1 · kind B1 · utility

12Cited by

1References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Kia-Seng Low · Hopewell Junction, US
Joerg Schmid · Dresden, DE

Key dates

Filing date	Apr 17, 2003
Grant date	Jul 27, 2004
Priority date	—
Expiry date	Apr 17, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10B61/00
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A magnetic memory cell is disclosed. The memory cell includes first conductor and second conductors coupled to first and second electrodes of a magnetic element. A plurality of memory cells is interconnected by first and second conductors to form a memory array or block. The second conductor is coupled to the second electrode via a conductive strap having a fuse portion. The fuse portion can be blown to sever the connection between the second conductor and magnetic element, Nitride.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.