Method of inspecting an anisotropic etch in a microstructure
US6770213B2 · kind B2 · utility
4Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2001 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Apr 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for evaluating an anisotropic etch in a microstructure. First a film is formed on a substrate. Next a series of holes of progressively different area and having specific geometric shapes are formed through the film. An anisotropic etch is carried out in the microstructure through the holes by relying on different etch rates in different crystal planes under known and reproducible conditions. Finally, the microstructure is inspected through the holes after the anisotropic etch to compare results from holes of different area. The method is useful in the determination of etch depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.