Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrate
US6770528B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 19, 2003 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Feb 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.