Implantation for the formation of CuX layer in an organic memory device
US6770905B1 · kind B1 · utility
41Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Jul 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/649
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An organic memory cell having a CuX layer made by implantation is disclosed. The organic memory cell is made of two electrodes, at least one containing copper, with a controllably conductive media between the two electrodes. The controllably conductive media contains an organic semiconductor layer and CuX layer made by implantation of a Group VIB element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.