High K dielectric film
US6770923B2 · kind B2 · utility
82Cited by
18References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Mar 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric layer comprises lanthanum, aluminum, nitrogen, and oxygen and is formed between two conductors or a conductor and substrate. In one embodiment, the dielectric layer is graded with among the lanthanum, nitrogen, or aluminum. An additional insulating layer may be formed between the conductor or substrate and the dielectric layer. The dielectric layer can be formed by atomic layer chemical vapor deposition, physical vapor deposition, organometallic chemical vapor deposition or pulsed laser deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.