Semiconductor integrated circuit and nonvolatile memory element
US6771538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2003 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Jul 2, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Owing to the above, even with the single-layer gate process such as single-layer polysilicon gate process, it is possible to obtain a semiconductor integrated circuit such as system LSI in which a nonvolatile memory which is excellent in data retention capability is merged and packaged with a DRAM etc. Further, since the nonvolatile memory of high reliability can be formed without adding any step to a related art manufacturing process, such as a standard CMOS manufacturing process, the present invention may be readily applied to an LSI in which the nonvolatile memory and a logic LSI, or the nonvolatile memory and a DRAM are merged and packaged on an identical semiconductor substrate. Accordingly, a system LSI in which a flash memory is merged and packaged can be provided without increasing the cost of manufacture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.