Method and apparatus for determining critical dimension variation in a line structure
US6773939B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 2, 2001 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Jan 23, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/95607
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for determining critical dimension variation includes providing a wafer having a grating structure comprising a plurality of lines; illuminating at least a portion of the lines with a light source; measuring light reflected from the illuminated portion of the lines to generate a reflection profile; and determining a critical dimension variation measurement of the lines based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure comprising a plurality of lines includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the lines. The detector is adapted to measure light reflected from the illuminated portion of the lines to generate a reflection profile. The data processing unit is adapted to determine a critical dimension variation measurement of the lines based on the reflection profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.