Method of forming a diode for integration with a semiconductor device and method of forming a transistor device having an integrated diode
US6773977B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 17, 2000 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Aug 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
The present invention relates to a method of forming a diode (2) for integration with a semiconductor device comprising the steps of providing a layer (4) of semiconductor material, forming a dielectric layer (6) over the layer of semiconductor material, introducing a first conductivity type dopant into the dielectric layer (6), forming a semi-conductive layer (8) over the dielectric layer (6), introducing a second conductivity type dopant into a first region (12) of the semi-conductive layer and re-distributing the first conductivity type dopant from the dielectric layer (6) into the semi-conductive layer (8) so as to form a second region (18) of the first conductivity type dopant in the semi-conductive layer (8), the second region (18) being adjacent the first region (12) so as to provide a P/N junction of the diode (2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.