Patent · US Expired

Inline detection device for self-aligned contact defects

US6774394B2 · kind B2 · utility

1Cited by
2References
15Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 1, 2002
Grant dateAug 10, 2004
Priority date
Expiry dateFeb 1, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/34
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present invention provides an inline detection device for self-aligned contact defects, formed in a semiconductor substrate, comprising: an active area, formed in the semiconductor substrate, comprised of a serpentine gate having spacers on the side, a plurality of first contact windows nested immediately between the same spacers, a plurality of first contact plugs formed in the first contact windows, and two probing pads, formed in the semiconductor substrate, comprised of a plurality of matrix gates, a second contact window exposing portions of the matrix gates, and a second contact plug formed in the second contact window.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.