Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio
US6774462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Oct 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.