Self-test for leakage current of driver/receiver stages
US6774656B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2001 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Jun 1, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/31712
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to a test for current leakage of driver/receiver stages, and in particular for bi-directional input/output stages (10) of a semiconductor chip. Two dedicated support transistor devices (56, 58) are added into the prior art switching scheme, together with a simple control logic (48, 50, 52, 60, 62, 64) for selectively controlling the two dedicated support transistor devices according to a predetermined test scheme. An on-chip self-test feature provides valid voltage levels which are convertible by the receiver (24) to predictable logic states at the evaluation line RDATA. The test can be performed autonomously on the chip without the requirement for an external test device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.