Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers
US6776696B2 · kind B2 · utility
5Cited by
6References
72Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Oct 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A continuous CMP process for polishing multiple conductive and non-conductive layers on a semiconductor substrate. The continuous process comprises the steps of: (a) disposing a substrate on a platen; (b) polishing a first layer using both a mechanical means and a chemical means; and (c) polishing a second layer upon adjusting at least one parameter in either the mechanical means, chemical means, or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.