EUVL mask structure and method of formation
US6777137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Dec 20, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/24
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An extreme ultraviolet lithography (EUVL) mask structure and associated method of formation. A first conductive layer is provided between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack. The multilayer stack is adapted to substantially reflect EUV radiation incident thereon. The absorber layer is adapted to absorb essentially all of EUV radiation incident thereon. A mask pattern is formed in the absorber layer. Formation of the mask pattern in the absorber layer is accompanied by inadvertent formation of a defect in the absorber layer. The defect is subsequently repaired. The mask pattern may be extended into the first conductive layer and into the buffer layer in a substantially defect-free process that exposes a portion of the multilayer stack. A second conductive layer may be provided on the absorber layer, wherein the mask pattern is also formed in the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.