H2O vapor as a processing gas for crust, resist, and residue removal for post ion implant resist strip
US6777173B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Aug 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
H2O vapor is used as a processing gas for stripping photoresist material from a substrate having a patterned photoresist layer previously used as an ion implantation mask, wherein the patterned photoresist layer is defined by a photoresist crust covering a bulk photoresist portion. Broadly speaking, the H2O vapor is demonstrated to more efficiently strip the photoresist material having a cross-linked photoresist crust without causing the photoresist crust to pop and without causing the bulk photoresist to be undercut. Thus, H2O vapor provides a safe, efficient, and economical processing gas for stripping photoresist material having a photoresist crust resulting from an ion implantation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.