Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device
US6777253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2001 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Dec 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of AlxGa1−xN (0≦x≦1) on a substrate at a temperature higher than room temperature; and (2) growing a second semiconductor layer made of AluGavInwN (0<u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1) over the first semiconductor layer. In the step (1), the mole fraction x of Al of the first semiconductor layer is set so that the lattice constant of the first semiconductor layer at room temperature substantially matches with the lattice constant of the second semiconductor layer in the bulk state after thermal shrinkage or thermal expansion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.