Ferroelectric semiconductor memory device and a fabrication process thereof
US6777287B2 · kind B2 · utility
1Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2003 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | May 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO3, wherein the PZT film includes pinholes, with a pinhole density of about 17 &mgr;m2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.