Methods of forming programmable memory devices comprising tungsten
US6777291B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2003 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Apr 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
Abstract
The invention includes a method of making a programmable memory device. At least one floating gate layer is formed over a semiconductor substrate. A dielectric material is formed over the at least one floating gate layer, and a mass consisting essentially of W is formed over the dielectric material. The mass has a pair of opposing sidewalls. A first layer is formed over the mass and along the sidewalls of the mass, and a second layer is formed over the first layer. The second layer extends over the mass and along the sidewalls of the mass, and has a different composition than the first layer. After the second layer is formed, the first and second layers are anisotropically etched to form sidewall spacers extending along the sidewalls of the mass.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.