NROM memory circuit with recessed bitline

US6777725B2 · kind B2 · utility

Assignee

• Ingentix GmbH & Co. KG · DE

Inventors

• Josef Willer · Riemerling, DE
• Herbert Palm · Hohenkirchen, DE

Key dates

• Filing date: Jun 14, 2002
• Grant date: Aug 17, 2004
• Expiry date: Jun 14, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

An integrated memory circuit of the type of an NROM memory includes recessed bit lines formed of a material having a low ohmic resistance. By recessing the bit lines with respect to the semiconductor substrate surface of a peripheral controlling circuit for an array of memory cells allows to form the word line lithography on a perfect or almost perfect plane so that the word line formation results in a production with higher yield and, therefore, lower costs for the individual integrated memory circuit.