Sloped chamber top for substrate processing
US6778762B1 · kind B1 · utility
60Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Jun 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing chamber top is provided. The chamber top includes a top surface and a bottom surface having an inner and an outer edge. The bottom surface is sloped downward from the inner edge to the outer edge. A central opening extends through the chamber top. In one embodiment, the downward slope is between about 10 degrees and about 20 degrees. A method for processing a wafer in a processing chamber and a method for uniformly heating a substrate in a processing chamber are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.