Post-development treatment of patterned photoresist to promote cross-linking of polymer chains
US6780569B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Jun 14, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for creating semiconductor devices is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. Polymers in the patterned photoresist layer are chemically cross-linked by exposure to at least one reactive chemical. The pattern in the photoresist layer is transferred to the wafer. A reaction chamber for processing a wafer with a patterned layer of photoresist material, wherein the photoresist material was patterned by exposing the photoresist material using light of a wavelength less than 248 nm is provided. A chamber is provided with a central cavity. A wafer support for supporting the wafer in the central cavity is provided. A cross-linking reactive chemical source in fluid contact with the chamber and which provides a reactive chemical which causes cross-linking of the photoresist is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.