Method for fabricating a nitrided silicon-oxide gate dielectric

US6780720B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jay Burnham · Fletcher, US
• Anthony I. Chou · Beacon, US
• Toshiharu Furukawa · South Burlington, US
• Margaret L. Gibson · Underhill, US
• James S. Nakos · Saint Johnsbury Center, US
• Steven M. Shank · Jericho, US

Key dates

• Filing date: Jul 1, 2002
• Grant date: Aug 24, 2004
• Expiry date: Jul 1, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28185
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of fabricating a gate dielectric layer. The method comprises: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; exposing the silicon dioxide layer to a plasma nitridation to convert the silicon dioxide layer into a silicon oxynitride layer; and performing a spiked rapid thermal anneal of the silicon oxynitride layer.