Method to increase carbon and boron doping concentrations in Si and SiGe films
US6780735B2 · kind B2 · utility
3Cited by
16References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 30, 2001 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Apr 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
We provide a method of doping an Si or SiGe film with carbon or boron. By reducing the silicon precursor pressure, heavily-doped films may be obtained. A single dopant source may be used. The doped Si and SiGe films are of suitable quality for use in a transistor such as an HBT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.