Ryan Wuthrich
20Patents
7h-index
45Co-inventors
65Inventor score
Filing activity: Jan 31, 1996 → Nov 22, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6900519B2 | Diffused extrinsic base and method for fabrication | Electricity | 96 | Expired |
| US5874162A | Weighted sintering process and conformable load tile | Emerging Cross-Sectional Technologies | 62 | Expired |
| US6774000B2 | Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures | Electricity | 38 | Expired |
| US6858532B2 | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling | Electricity | 31 | Expired |
| US6875279B2 | Single reactor, multi-pressure chemical vapor deposition for semiconductor devices | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6858903B2 | MOSFET device with in-situ doped, raised source and drain structures | Electricity | 15 | Expired |
| US6426265B1 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 14 | Expired |
| US6744079B2 | Optimized blocking impurity placement for SiGe HBTs | Electricity | 7 | Expired |
| US6354309B1 | Process for treating a semiconductor substrate | Electricity | 5 | Expired |
| US5741131A | Stacking system for substrates | Mechanical Engineering; Lighting; Heating | 4 | Expired |
| US6173720A | Process for treating a semiconductor substrate | Electricity | 4 | Expired |
| US5948193A | Process for fabricating a multilayer ceramic substrate from thin greensheet | Electricity | 4 | Expired |
| US6869854B2 | Diffused extrinsic base and method for fabrication | Electricity | 3 | Expired |
| US6780735B2 | Method to increase carbon and boron doping concentrations in Si and SiGe films | Electricity | 3 | Expired |
| US6815802B2 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 3 | Expired |
| US7118995B2 | Yield improvement in silicon-germanium epitaxial growth | Electricity | 1 | Expired |
| US7413967B2 | Yield improvement in silicon-germanium epitaxial growth | Electricity | 1 | Active |
| US7713829B2 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 0 | Active |
| US7173274B2 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 0 | Expired |
| US6881259B1 | In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films | Chemistry; Metallurgy | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.